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  esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 1/14 1.5a li-ion/li polymer battery charger general description the emc5050 is a highly-integrated battery charger for single-cell li-ion or li-polymer batteries capable of operating with an input voltage reached 2.5v. it is a complete charger device designed to work with an usb port or 5v output ac adapter. the emc5050 operates with cc (constant current) mode and cv (constant voltage) mode profiles. a low-current preconditioning charge mode is also provided as a trickle charging operation. the charge current is programmable up to 1.5a with an external resistor or a logic input. the charge voltage is 1% accurate over the full application range. when operating with a current-limited adapter, the charger minimizes the thermal dissipation with pulsed operations to prevent overheat conditions that is commonly occurred with conventional linear chargers. the emc5050 reduces charge current for thermal fold-back to ensure product safe operation. the charger automatically re-charges the battery when the battery voltage drops blow a recharge threshold. the chip includes a safety timer for setting the fast charge time limit in case of charging a dead battery. additional features inclu de preconditioning of an over-discharged battery and charging the battery in a safe temperature range with an ntc thermistor interface. the thermally enhanced tqfn packages are offered for space limited handheld applications. features ? complete charger for single-cell li-ion batteries ? charges from either ac adapter or usb port ? integrated power pass device with current sensing ? no external blocking diode required ? pre-charge condition with safety timing ? 1% charger voltage accuracy ? programmable current limit up to 1.5a ? programmable end-of-charge current ? sleep mode for power saving ? charge current thermal fold-back ? ntc thermistor interface for battery temperature ? monitor ? stand-alone or integrated charger ? ambient temperature range: -40c to +85c ? thermally-enhanced tqfn-16l 4mmx4mm packages ? pb-free plus anneal available (rohs compliant applications ? pdas, cell phones and smart phones ? digital camera, mp3 and handheld gamming ? portable instruments including medical handhelds ? self-charging battery packs ? stand-alone chargers or usb port chargers
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 2/14 typical application in 1uf gnd v in r ref bat temp 1k 1k 4.2v li-ion battery pack iref status fault en emc5050 1uf rpu imin v2p8 1uf toen time r min c time fig. 1 package configuration in 1 2 4 12 11 fault bat imin 3 5 status time 9 10 temp iref 6 7 8 16 15 14 13 tqfn-16l (4x4mm) EMC5050-42HC16NRR 42 output voltage hc16 tqfn-16l (4x4mm) package nrr rohs & halogen free package commercial grade temperature rating: -40 to 85c package in tape & reel order, mark & packing information package vout(v) product id marking packing tqfn-16l (4x4mm) 4.2v EMC5050-42HC16NRR tape & reel 3k units
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 3/14 pin functions pin name tqfn-16l function 1,15,16 in charger input supply voltage. 2 fault active-low, open-drain output, capable sinking 5ma current. 3 status open-drain pin to show charging and inhibit states, capable sinking of 5ma current. 4 time timing capacitor pin for connecting a ca pacitor to set internal clocking and charger time reference. 5 gnd ground pin. 6 toen timeout enable control, high to enable timeout function during charge battery, low to disable timeout limit with internal 200kohm pull-up. 7 en chip enable control, high to activate the chip with internal 880 kohm pull-up. 8 v2p8 2.8v reference voltage output, capable drives up to 2ma. 9 iref a resistor can be connected at the pin to set the charge current. 10 imin a resistor can be connected at this pin to set end-of-charge current. 11 temp battery temperature input for ntc thermistor input, can be used for battery removal detection. 12, 13,14 bat connection to the battery positive node.
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 4/14 functional block diagram fig. 2
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 5/14 charge state flow chart fig. 3
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 6/14 absolute maximum ratings devices are subjected to fail if they stay above absolute maximum ratings. in ------------------------------------------------------- ? 0.3v to 6.5v en --------------------------------------------- ? 0.3v to v in + 0.3v) other pin voltage ---------------------- ? 0.3v to (v in + 0.3v) charger current ----------------------------------------------- 1.5a lead temperature (soldering, 10 sec)---------------- 260c operating temperature range ---------- ?40c to 85c junction temperature (note 1) ------------------------ 150c storage temperature range ------------- ? 65c to 150c esd susceptibility hbm --------------------------------------- 2kv mm ------------------------------------- 200v thermal data package thermal resistance parameter value ja (note 2) junction-ambient 45 o c/w tqfn-16l (4x4mm) jc (note 3) junction-case 8 o c/w electrical characteristics v in =5v and t a = 25c for the typical values. the maximum and minimum values are over -40c to +85c ambient temperature with a supply voltage in the range of 4.6v to 5.5v, unless otherwise noted. parameter symbol condition min typ max units input operating voltage range v in 4.6 5.0 5.5 v power-on reset v in rising voltage 3.2 3.6 3.9 v v in falling voltage 2.25 2.5 2.7 v standby current bat pin sink current i standby in floating or en = low -- -- 3.3 ua in pin supply current bat floating and en pulled low -- 30 -- ua in pin supply current i in bat floating and en floating -- -- 1 ma v in -v bat offset voltage offset voltage v os v bat = 4.2v, i bat = 20ma, use status pin -- 150 -- mv voltage regulation output voltage v ch tested at 50ma load, 5v input, and +25c 4.158 4.2 4.242 v dropout voltage v bat = 4.0v, charge current = 0.35a -- 175 -- mv charge current constant charge current i charge r ref = 100k, v bat = 3.0v ~4.0v 760 800 840 ma trickle charge current i trickle r ref = 100k, v bat = 2.5v -- 120 -- ma end-of-charge threshold i min r min = 100k 70 80 90 ma v2p8 pin output v2p8 pin output voltage v v2p8 load current less than 1ma 2.8 2.9 3.0 v recharge threshold recharge threshold v rechrg 3.97 4.05 4.13 v recharge threshold hysteresis v rechhys -- 50 -- mv trickle charge threshold trickle threshold voltage v min 2.7 2.8 2.9 v
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 7/14 trickle threshold hysteresis v minhys 50 100 150 mv temperature monitoring high voltage threshold v tmax v v2p8 = 3.0v -- 2.0 -- v high voltage threshold hysteresis v v2p8 = 3.0v -- 1.9 -- v low voltage threshold v tmin v v2p8 = 3.0v -- 1 -- v low voltage threshold hysteresis v v2p8 = 3.0v -- 1.1 -- v threshold foldback threshold t fold -- 107 -- c oscillator oscillation frequency f osc c time = 15nf 305 333 370 hz logic input and output en/toen pin logic input high 1.5 -- -- v en/toen pin logic input low -- -- 0.8 v en/toen pin internal pull-up 880 kohm status/fault output voltage 10 ma current -- -- 0.8 v note 1: t j is a function of the ambient temperature t a and power dissipation p d (t j = t a + (p d ) * ja )). note 2: ja is measured in the natural convection at t a =25 on a highly effective thermal conductivity test board (2 layers , 2s0p ) according to the jedec 51-7 thermal measurement standard. note 3: jc represents the heat resistance between the chip and the package top case.
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 8/14 typical performance characteristics the test conditions for the typica l operating performance are: v in = 5v, t a = +25c, r ref = 100k , v bat = 3.7v, unless otherwise noted.
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 9/14 description of charger operation the emc5050 initiates a charger operation when attached with a voltage source device or adaptor. fig. 4 shows a typical charge profile when the chip operates as a conven tional linear charger with a constant voltage source. the charging current is set by an external resistor up to 1.5a. th e target charging voltage is 1% accurate over the specified range. the charger ic resets internal operational circuits when internal power-on-reset (por) signal becomes valid. v2p8 presents a voltage reference output source capable driving 2ma current after por. other indication output pins are status and fault. the status is active low as an open-drain type to indicate a charging cycle and valid till eoc. the fault output signal becomes low to signal any occurred fault conditions such as a charging time fault, battery temperature fault or when the battery is detached. when ch arge with a current-limited adapter, emc5050 should be programmed with iref over the upper limit of ilim. a typical charge profile is displayed in fig. 5 for minimizing power dissipation during cc mode. the worst power dissipation is often at the start of cv mode, although thermal fold-back conditions could still occur in this application case. fig. 4 a typical charger profile as a conventional linear charger charge current vbat vin off pre-charge cc charge cv charge standby timeout fig. 5 a typical charge profile with a current-limited adapter
esmt/emp emc5050 elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 10/14 application information one linear charging case, the emc5050 performs either constant current (cc) and constant voltage (cv) profiles. the charging current is set by an external resistor up to 1.5a. the target charging voltage is 1% accurate over the specified range. emc5050 enters a trickle mode for preconditioning operation each time when a charging cycle starts till that the minimum charging voltage is reached and verified in 15 clock cycles. a thermal-feedback function offers thermal protection during linear charging operations. when the internal temperature emc5050 goes up above 100 degree c, the charger automatically reduces the charging current. temp pin is examined for charging temperature during the charging operation. the temperature range is determined with an external ntc thermistor. the ntc need have 7:1 for rcold to rhot, once user choose a ntc, the temperature range will be fixed also, then we will have 2.0=3.0*rcold/(rpu+rcold)??? 1.0=3.0*rhot/(rpu+rhot)???.. using these two formulas, we can get rpu, and also can get rcold and rhot refer the ntc table. emc5050 provides a timeout limit to prevent charging a dead battery for extensive time. recharging is automatically started when batter voltage drop to the recharging threshold point. emc5050 enters the shutdown mode in case no voltage adapter is attached. status fault condition high high power-down, charging is suspended or interrupted low high charging high low bad battery (safety timer expired) charge current setting where r ref in k ? charge timer setting where time in minutes end-of-charge current setting min min r i 8000 = where r min in k ? nf c time time 1 14 = ? ? ? ? ? ? ? ? = ref e ch r i 5 arg 10 8 . 0
esmt/emp elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 11/14 application circuit = + ? k k k k k 7 . 85 150 200 150 200 fig. 6 external power path application circuit
esmt/emp elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 12/14 package outline drawing tqfn-16l (4x4 mm) ex p os ed p ad min max dimension in mm a0.700.85 minmax a1 0.00 0.05 d2 2.00 2.20 a3 0.18 0.25 e2 2.00 2.20 b0.250.35 d3.954.05 e3.954.05 e l0.350.65 0.65 bsc symbol dimension in mm
esmt/emp elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 13/14 revision history revision date description 0.1 2011.05.23 original. 0.2 2012.04.24 revise package information
esmt/emp elite semiconductor memory technology inc./elite micropower inc. publication date : apr. 2012 revision : 0.2 14/14 important notice all rights reserved. no part of this document may be repr oduced or duplicated in any form or by any means without the prior permission of esmt. the contents contained in this docume nt are believed to be accurate at the time of publication. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is pr esented only as a guide or examples for the application of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other intellect ual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted un der any patents, copyrights or other intellectual property righ ts of esmt or others. any semiconductor devices may have in herently a certain rate of failure. to minimize risks associated with cu stomer's application, adequate design and operating safeguards against inju ry, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications.


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